Power Transistors And Their Uses

Today, I'm going to give you an overview of the Power Transistors. This blog is the continuous blog of the series of Transistors so if you wish to read about any other Transistor then you may visit our website. In this blog, we will be discussing the Bipolar Junction Transistor, Power BJT’s With Their Model Number, Darlington transistor, MOSFET, Power MOSFET’s with Their Model Number, Insulated-gate Bipolar Transistor (IGBTs), Types of IGBT, IGBT’s With Their Model Number and so on.




The power transistor is a type of transistor that is used in high power amplifiers and power supplies. Power transistors are suited for applications where high power is being used, current, and voltage. It is a junction transistor, is designed to handle high current and power, and is also used in audio and switching circuits. 


The classification of power transistor includes the following
Bipolar junction transistor (BJTs)
Metal oxide semiconductor field-effect transistor (MOSFETs)
Insulated-gate bipolar transistors (IGBTs).


Bipolar Junction Transistor
A BJT is a bipolar junction transistor, which is capable of handling two polarities (holes and electrons), it can be used as a switch or as an amplifier and is also known as a current-controlled device.

The following are the characteristics of a Power BJTs,

• It has a larger size, so that maximum current can flow through it
• The breakdown voltage is high
• It has higher current carrying and high-power handling capability
• It has a higher on-state voltage drop
• High power application

Power BJT’s With Their Model Number

TIP32C - PNP Power Transistor	TIP31C – NPN Power Transistor
The TIP32 is a PNP power transistor. Since it has a high collector current of about 3A it can be used for Power switching or large signal amplification. The transistor is mainly known for its high amplification capacity.	TIP31C is an NPN POWER TRANSISTOR. It has a high collector current of about 3A.
Specifications Parameter Value collector-base voltage (IE = 0) -100V Collector-emitter voltage (IB = 0) -100V   Emitte-base voltage (IC = 0) -5V Collector current -3A Collector peak current  -5A Total power dissipation 40W Base current -1A base-emitter voltage  -1.8V Collector-emitter saturation voltage  -1.2V Emitter cut-off current (IC = 0) -1 mA DC current gain 50	Specifications Parameter Value collector-base voltage (IE = 0) 100V Collector-emitter voltage (IB = 0) 100V   Emitte-base voltage (IC = 0) 5V Collector current 3A Collector peak current  5A Total power dissipation 40W Base current 1A base-emitter voltage  1.8V Collector-emitter saturation voltage  1.2V Emitter cut-off current (IC = 0) 1 mA DC current gain 50
Applications high current switching (up to 3A) loads Can be used as medium Power switches Large signal amplification Speed control of Motors Half-bridge circuits Inverter and other rectifier circuits	Applications DC motor speed control Lighting systems PWM applications Relay drivers Switch mode power supply Audio Amplifiers Signal Amplifiers
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Darlington transistor

 

A Darlington configuration (also known as a Darlington pair) is a circuit made up of two bipolar transistors, with the emitter of one linked to the base of the other, such that the current amplified by the first transistor is amplified further by the second. The collectors of both transistors are linked. This combination offers a much higher current gain than any of the transistors individually.

TIP127 - Darlington NPN Transistor	TIP122 - Darlington PNP Transistor
The TIP127 is a Darlington pair PNP transistor. It functions like a normal PNP transistor, but since it has a Darlington pair inside it has a good collector current rating of about -5A and a gain of about 1000. It can also withstand about -100V across its collector- Emitter hence can be used to drive heavy loads.	The TIP122 is a Darlington pair NPN transistor. It functions like a normal NPN transistor, but since it has a Darlington pair inside it has a good collector current rating of about 5A and a gain of about 1000. It can also withstand about 100V across its collector- Emitter hence can be used to drive heavy loads.
Specifications Parameter Value collector-base voltage (IE = 0) TIP125= - 60TIP126= -80TIP127= -100V Collector-emitter voltage (IB = 0) TIP125= - 60TIP126= -80TIP127= -100V Emitte-base voltage (IC = 0) -5V Collector current -5A Collector peak current  -8A Total power dissipation 65W Base current - 120mA base-emitter voltage  -2.5V Collector-emitter saturation voltage ( IC = -3A, IB = -12mA) -2V Emitter cut-off current (IC = 0) -2mA DC current gain 1000	Specifications Parameter Value collector-base voltage (IE = 0) TIP120= 60TIP121= 80TIP122= 100V Collector-emitter voltage (IB = 0) TIP120= 60TIP121= 80TIP122= 100V Emitte-base voltage (IC = 0) 5V Collector current 5A Collector peak current  8A Total power dissipation 65W Base current 120mA base-emitter voltage  2.5V Collector-emitter saturation voltage(IC = 3A, IB = 12mA)  2V Emitter cut-off current (IC = 0) 2mA DC current gain 1000
Applications It is used to run higher current devices such as loads that work on up to the 5A. It works as the switch which consumes intermediate power during its working. It is used in such circuits where higher amplification is required. It is also used in motors circuits to control their speeds. It is also used in Inverter circuits and other rectifier circuits.	Applications Can be used to switch high current (up to 5A) loads Can be used as medium Power switches Used where high amplification is needed Speed control of Motors Inverter and other rectifier circuits
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Other Power Transistors(BJT):

NPN	PNP
TIP110-112 Complementary Silicon Power Darlington Transistor	TIP115-117 Complementary Silicon Power Darlington Transistor
BJE243 Silicon Power Plastic Transistor	BJE253 Silicon Power Plastic Transistor
TIP41TIP41ATIP41BTIP41CComplementary Silicon Plastic Power Transistor	TIP42TIP42ATIP42BTIP42CComplementary Silicon Plastic Power Transistor
BD135BD137BD139Plastic medium power Silicon Transistor	BD136BD138BD140 Plastic medium power Silicon Transistor
TTC5200 Silicon Triple Diffused Transistor	TTA1943 Silicon Triple Diffused Transistor

MOSFET 

MOSFET stands for Metal Oxide Field Effect Transistor, MOSFET is a three-terminal device with source, base, and drain terminals. It is a sub-classification of the FET transistor. 




The MOSFET is Classified into two types based on the type of operations, namely Enhancement mode MOSFET (E-MOSFET) and Depletion mode MOSFET (D-MOSFET)

So, in general, there are 4 different types of MOSFETs
N-Channel Depletion mode MOSFET
P-Channel Depletion mode MOSFET
N-Channel Enhancement mode MOSFET
P-Channel Enhancement mode MOSFET

N-channel MOSFETs are called NMOS	P-Channel MOSFETs are called PMOS

The main difference between the N-Channel MOSFET and P-Channel MOSFET is that in an N-channel, the MOSFET switch will remain open until a gate voltage is provided. When the gate pin gets a voltage, the switch (between the Drain and the Source) closes, and in P-Channel MOSFETs, the switch remains closed until a gate voltage is applied.

Similarly, the basic difference between Enhancement Mode and Depletion Mode MOSFETs is that the gate voltage given to E-MOSFET must always be positive, and it has a threshold voltage over which it switches on completely. A D-gate MOSFET's voltage can be either positive or negative, and it never fully turns on. Also, a D-MOSFET can operate in both Enhancement and Depletion modes, whereas an E-MOSFET can only operate in Enhancement mode.




The following are the characteristics of a MOSFET,

• It is also known as a voltage controller
• No input current is needed
• A high input impedance.

Power  MOSFET’s with Their Model Number

IRF9533 P Channel Power MOSFET	IRFZ14 N Channel Power MOSFET
Specifications Parameter Value Gate-Source Voltage ±20V Drain-Source voltage -60V Drain current -10A Drain peak current  -40A Total power dissipation 75W Gate threshold voltage -4V Output/Input Capacitance 450/700pF Gate-Source Forward Leakage 100na Drain-Source On-Resistance 0.4Ω	Specifications Parameter Value Gate-Source Voltage ±20V Drain-Source voltage 60V Drain current 10A Drain peak current  40A Total power dissipation 43W Gate threshold voltage 4V Output/Input Capacitance 300/160 pF Gate-Source Forward Leakage 100nA Drain-Source On-Resistance 0.2Ω
Applications Motor Control Audio Amplifiers Switched Converters Control Circuit Pulse Amplifiers	Applications Motor Control DC-DCconverter Power switch solenoid drive Audio Amplifiers

IRF5210 P Channel Power MOSFET	STP40NF10L N Channel Power MOSFET
IRF5210 Power MOSFET with advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.	This  Power  Mosfet series is specifically been designed to minimize input capacitance and gate charge.  It is, therefore, suitable as a primary switch in advanced high-efficiency isolated DC-DCconverters and Computer applications. It is also intended for any  application with low gate charge drive requirements.
Specifications Parameter Value Gate-Source Voltage ±20V Drain-Source voltage -100V Drain current -40A Drain peak current  -140A Total power dissipation 200W Gate threshold voltage -4V Output/Input Capacitance 790/2700pF Gate-Source Forward Leakage  100na Drain-Source On-Resistance 0.06Ω	Specifications Parameter Value Gate-Source Voltage ±17V Drain-Source voltage 100V Drain current 40A Drain peak current  160A Total power dissipation 150W Gate threshold voltage 2.5V Output/Input Capacitance 290/2300 pF Gate-Source Forward Leakage 100nA Drain-Source On-Resistance 0.036Ω
Applications HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROLLER AUTOMOTIVE	Applications HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROLLER AUTOMOTIVE

Other Power MOSFET’S:

• IRFP460 N-Channel Power MOSFET
• P55NF06 N-Channel Power MOSFET
• IRFZ44N N-Channel Power MOSFET
• IRF1405 N-Channel Power MOSFET
• IRF4905 P-Channel Power MOSFET
• IRF5305 P-Channel Power MOSFET
• IRF9520 P-Channel Power MOSFET
• IRF9530 P-Channel Power MOSFET

Insulated-gate Bipolar Transistor (IGBTs)

As the name implies, an IGBT is a transistor that combines the functions of a FET and a BJT. Its function is determined by the gate, which may turn the transistor on or off. Inverters, converters, and power supplies are all examples of power electronics equipment that use them.

Types of IGBT
The IGBT is classified into two types based on the n+ buffer layer, the IGBTs that are having the n+ buffer layer is called the Punch through IGBT (PT-IGBT), the IGBTs that does not have an n+ buffer layer are called the Non-Punch Through- IGBT (NPT- IGBT).

Difference between Punch through IGBT (PT-IGBT) and Non-Punch Through- IGBT (NPT- IGBT)

Punch through IGBT (PT-IGBT)	Non-Punch Through- IGBT (NPT- IGBT)
The collector is a heavily doped P+ layer	The collector is a lightly doped P-layer.
It has a small positive temperature coefficient of ON- State voltage, hence parallel operation requires great care and attention.	The temperature coefficient of ON-state voltage is strongly positive, hence the parallel operation is easy.
The turn-off loss is more temperature-sensitive, hence it increases significantly at a higher temperature.	The turn-off loss is less temperature-sensitive, so, it will remain unchanged with temperature.

Insulated-gate Bipolar transistors have the following features (IGBTs),

• At the input of the circuit, the losses are less
• higher power gain.

IGBT’s With Their Model Number FGA25N120

FGA25N120AN	FGA25N120AND	FGA25N120ANTD	FGA25N120ANTDTU
Employing NPT(NPT-IGBTs consist of a low-doped n-type substrate ) technology, AN series of IGBT’s provides low conduction and switching losses.  The series offers a solution for applications such as induction heating (IH), motor control, general-purpose inverters and uninterruptible power supplies (UPS).	Employing  NPT(NPT-IGBTs consist of a low-doped n-type substrate )  technology, AND  a series of IGBTs provides low conduction and switching losses. the series offers a solution for power supplies (UPS).	Advanced NPT technology, the 1200V NPT IGBT offers superior conductionand switching performances, high avalanche ruggedness andeasy parallel operation. This device is well suited for resonant or soft switching applications such as induction heating,microwave oven.	Advanced NPT technology, the 1200V NPT IGBT offers superior conductionand switching performances, high avalanche ruggedness andeasy parallel operation. This device is well suited for resonant or soft switching applications such as induction heating,microwave oven.
Specifications Parameter Value Gate-Emitter Voltage ±20V Collector-emitter voltage  1200V   Collector current 40A Collector peak current  75A Total power dissipation 310W Collector Cut-Off Current 3mA G-E Threshold Voltage  3.5-7.5V Collector-emitter saturation voltage  2.9V Input/Output Capacitance 2100/180pF	Specifications Parameter Value Gate-Emitter Voltage ±20V Collector-emitter voltage  1200V   Diode Continuous Forward Current 25A Collector current 40A Collector peak current  75A Total power dissipation 310W Collector Cut-Off Current 3mA G-E Threshold Voltage  3.5-7.5V Collector-emitter saturation voltage  2.9V Input/Output Capacitance 2100/180pF	Specifications Parameter Value Gate-Emitter Voltage ±20V Collector-emitter voltage  1200V   Diode Continuous Forward Current 50A Collector current 50A Collector peak current  90A Total power dissipation 312W Collector Cut-Off Current 3mA G-E Threshold Voltage  3.5-7.5V Collector-emitter saturation voltage  2V Input/Output Capacitance 3700/130pF	Specifications Parameter Value Gate-Emitter Voltage ±20V Collector-emitter voltage  1200V   Diode Continuous Forward Current 50A Collector current 50A Collector peak current  90A Total power dissipation 312W Collector Cut-Off Current 3mA G-E Threshold Voltage  3.5-7.5V Collector-emitter saturation voltage  2V Input/Output Capacitance 3700/130pF
Applications Induction Heating UPS AC & DC motor controls General purpose inverters	Applications Induction Heating UPS AC & DC motor controls General purpose inverters	Applications  Induction Heating Microwave Oven	Applications  Induction Heating Microwave Oven

Other IGBTs:

• FGW30XS65C
• FGW40XS65C
• FGW40N65WD
• FGW40N120W
• FGZ50N65WD

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POWER TRANSISTORS

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