Description
Vishay's third-generation Power MOSFETs offer the optimum combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specifications
| Model | IRFP460 |
| Brand | VISHAY |
| Channel Type | N Channel |
| Drain Source Voltage | 500V |
| Gate Source Voltage | 20V |
| Max. Gate Threshold Voltage | 4V |
| Maximum Drain Current | 20A |
| Max. Junction Temperature | 150°C |
| Max. Power Dissipation | 250W |
| Total Gate Charge | 100nC |
| Rise TIme | 15ns |
| Drain Source Capacitance | 500pF |
| Max. Drain Source On-State Resistance | 0.27 Ohm |
| Package | TO-247 |
| Country of Origin | China |