Description
The TTA1943 is a high power PNP transistor developed by Toshiba. It is often utilized in high power audio circuits or AF amplifiers due to its high current gain and collector current. The TTA1943 is a silicon through-hole transistor in a TO-3 package. Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Specifications
|
Characteristics |
Symbol |
Rating |
|
collector-base voltage |
VCBO |
-230V |
|
collector-emitter voltage |
VCEO |
-230V |
|
emitter-base voltage |
VEBO |
-5V |
|
Collector current |
IC |
-15A |
|
Base current |
IB |
-1.5A |
|
Collector power dissipation (Tc=25°C) |
Pc |
150W |
|
Junction temperature |
Tj |
150°C |
|
Storage temperature range |
Tstg |
-55 to 150°C |
| Country of Origin | China |