TTA1943 TOSHIBA - High Power Amplifier Transistor - PNP

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Description

The TTA1943 is a high power PNP transistor developed by Toshiba. It is often utilised in high power audio circuits or AF amplifiers due to its high current gain and collector current. The TTA1943 is a silicon through-hole transistor in a TO-3 package. Recommended for 100-W high-fidelity audio frequency amplifier output stage.

 Note: You can also buy (TTC5200 TOSHIBA Silicon Transistor NPN Triple Diffused)

Pin Configuration

Pin Number

Pin Name

Description

1

Base

Controls the biasing of the transistor; used to turn the transistor ON or OFF.

2

Collector

Current flows in through collector, which is generally linked to the load.

3

Emitter

Current Drains out through emitter, which is generally linked to ground.

 

Specifications

Characteristics                          

Symbol          

Rating   

collector-base voltage

VCBO

-230V

collector-emitter voltage

VCEO

-230V

emitter-base voltage 

VEBO

-5V

Collector current

IC

-15A

Base current

IB

-1.5A

Collector power dissipation (Tc=25°C)

Pc

150W

Junction temperature

Tj

150°C

Storage temperature range

Tstg

-55 to 150°C

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