Trino TGAN60N60F2DS 600V Field Stop Trench IGBT Power Transistor

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Sold By: HatchnHackSKU: D13-18

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Insulated gate bipolar transistors or IGBTs are a form of a discrete semiconductor device that is generally used for power applications such as inverters, converters and power supplies. IGBT transistors have the advantage of combining many of the characteristics of MOSFETs and bipolar transistors, giving the high voltage and current handling capabilities of bipolar transistors with the high-speed switching and low gate current performance of power MOSFETs.


  • 600V Field Stop Trench Technology
  • High-Speed Switching
  • Low Conduction Loss
  • Positive Temperature Coefficient
  • Easy Parallel Operation
  • RoHS Compliant
  • JEDEC Qualification


Model TGAN60N60F2DS
Type of IGBT Channel N-Channel
Maximum Power Dissipation @25°C 347W
Max. Collector-Emitter Voltage 600V
Collector-Emitter Saturation Voltage 1.8V DC
Max. Gate Emitter  Voltage 20V DC
Max. Collector Current 120A
Max. Junction Temperature 150°C
Rise Time 125ns
Max. Collector Capacity 170pF
Package TO-3PN
Country of Origin China


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