Description
P-Channel MOSFETs are the best option for high-side switches as a result of this. For low-voltage driving applications and non-isolated POLs, where space is at a premium, the design's simplicity is advantageous. The streamlined gate driving technique, which frequently lowers total cost, is one of the great benefits of P-Channel MOSFET features. P-Channel MOSFETs require a negative voltage from the gate to the source (VGS) in order to switch on, which is the primary functional distinction (as opposed to an N-Channel MOSFET, which requires a positive VGS voltage). P-channel MOSFETs are ideal for a variety of Industrial applications including Battery protection, reverse polarity protection, linear battery chargers, load switches, DC-DC converters, on-board charger, motor control, and low voltage drive applications.
Features
- High reliability
- Ideal for printed circuit board
- Industry standard package
Specification
| Model | TPC8114 |
| Type | MOSFET |
| Type of Control Channel | P -Channel |
| Package type | SMD |
| Maximum Power Dissipation (Pd) | 1.9 W |
| Maximum Drain-Source Voltage |Vds| | 30 V |
| Maximum Gate-Source Voltage |Vgs| | 20 V |
| Maximum Drain Current |Id| | 18 A |
| Maximum Junction Temperature (Tj) | 150 °C |
| Rise Time (tr) | 25 nS |
| Drain-Source Capacitance (Cd) | 1460 pF |
| Maximum Drain-Source On-State Resistance (Rds) | 0.0045 Ohm |
| Country of Origin | China |