TPC8114 30V, 18A P-channel MOSFET

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Description

P-Channel MOSFETs are the best option for high-side switches as a result of this. For low-voltage driving applications and non-isolated POLs, where space is at a premium, the design's simplicity is advantageous. The streamlined gate driving technique, which frequently lowers total cost, is one of the great benefits of P-Channel MOSFET features'-Channel MOSFETs require a negative voltage from the gate to the source (VGS) in order to switch on, which is the primary functional distinction (as opposed to an N-Channel MOSFET, which requires a positive VGS voltage). P-channel MOSFETs are ideal for a variety of Industrial applications including Battery protection, reverse polarity protection, linear battery chargers, load switches, DC-DC converters, on-board charger, motor control, and low voltage drive applications.

Features

  • High reliability 
  • Ideal for printed circuit board
  • Industry standard package
Specification
Model TPC8114
Type MOSFET
Type  of Control Channel P -Channel
Package type SMD
Maximum Power Dissipation (Pd) 1.9  W
Maximum Drain-Source Voltage |Vds| 30 V
Maximum Gate-Source Voltage |Vgs| 20 V
Maximum Drain Current |Id| 18 A
Maximum Junction Temperature (Tj) 150 °C
Rise Time (tr) 25 nS
Drain-Source Capacitance (Cd) 1460 pF
Maximum Drain-Source On-State Resistance (Rds) 0.0045 Ohm
Quantity 1000
Country of Origin China

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