TOSHIBA K10A60DR 600V, N-Channel MOSFET TO-220FP

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TOSHIBA K10A60DR 600V, N-Channel MOSFET TO-220FP. In there the majority of carriers are the electrons which are responsible for the flow of current in MOSFET. It is a through hole(THD) active component that consists of three terminals Gate, Drain, and Source. It is often used in switching regulator applications.


  • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (Typ.)
  • High forward transfer admittance: |Yfs| = 6.0 S (Typ.)
  • Low leakage current: IDSS = 10 μA (VDS = 600 V)
  • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


 Model K10A60DR
 Mounting Type Through Hole
 Transistor Polarity N-Channel
 Drain-Source Voltage (VSS) 600V
 Gate-Source Voltage (VGSS)
 DC Drain-Current (ID) 10A
 Pulse Drain-Current (IDP) 40A
 Drain Power Dissipation (PD) 45W
 Storage Temperature Range -55~150 °C
 Package TO-220FP
Country of Origin China

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