Description
TOSHIBA K10A60DR 600V, N-Channel MOSFET TO-220FP. In there the majority of carriers are the electrons which are responsible for the flow of current in MOSFET. It is a through hole(THD) active component that consists of three terminals Gate, Drain, and Source. It is often used in switching regulator applications.
Features
- Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (Typ.)
- High forward transfer admittance: |Yfs| = 6.0 S (Typ.)
- Low leakage current: IDSS = 10 μA (VDS = 600 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Specifications
| Model | K10A60DR |
| Brand | TOSHIBA |
| Mounting Type | Through Hole |
| Transistor Polarity | N-Channel |
| Drain-Source Voltage (VSS) | 600V |
| Gate-Source Voltage (VGSS) |
±30V
|
| DC Drain-Current (ID) | 10A |
| Pulse Drain-Current (IDP) | 40A |
| Drain Power Dissipation (PD) | 45W |
| Storage Temperature Range | -55~150 °C |
| Package | TO-220FP |
| Country of Origin | China |