TOSHIBA GT60N321 1000V/60A N-Channel IGBT

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TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A). It is a through-hole(THD) active component with three terminals: gate, collector, and emitter. It is a fourth-generation IGBT unit and It is often used in high-power switching applications.



  • FRD included between emitter and collector
  • Enhancement mode type
  • High speed
                   IGBT : TF = 0.25 μs (Typ.) (IC = 60 A)
                    FRD : TRR = 0.8 μs (typ.) (di/dt = −20 A/μs)
  • Low saturation voltage
 Model GT60N321
 Collector-Emitter Voltage (VCES) 1000V
 Gate-Emitter Voltage (VGES) ±25V
 DC Collector-Current (IC) 60A
 Collector Power Dissipation (Pc) 170W
 Junction Temperature (TJ) 150°C
 Operating Temperature -55~150°C
 Screw Torque 0.8 Nm.
 Mounting Type  Through-hole

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