Description
TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A). It is a through-hole(THD) active component with three terminals: gate, collector, and emitter. It is a fourth-generation IGBT unit and It is often used in high-power switching applications.
Features
- FRD included between emitter and collector
- Enhancement mode type
- High speed
IGBT : TF = 0.25 μs (Typ.) (IC = 60 A)
FRD : TRR = 0.8 μs (typ.) (di/dt = −20 A/μs) - Low saturation voltage
Specifications
| Model | GT60N321 |
| Brand | TOSHIBA |
| Collector-Emitter Voltage (VCES) | 1000V |
| Gate-Emitter Voltage (VGES) | ±25V |
| DC Collector-Current (IC) | 60A |
| Collector Power Dissipation (Pc) | 170W |
| Junction Temperature (TJ) | 150°C |
| Operating Temperature | -55~150°C |
| Screw Torque | 0.8 Nm. |
| Mounting Type | Through-hole |
| Country of Origin | China |