TOSHIBA GT50J322 Silicon N-Channel IGBT

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TOSHIBA GT50J322 is a fourth-generation silicon N-Channel (Insulated Gate Bipolar Transistor) IGBT. IGBT can use in switching applications by operating the Gate. It is a Through-hole(THD) active component that consists of three terminals Gate, Collector, and Emitter. GT50J322 IGBT is often used in current resonance inverter switching applications.



  • FRD included between emitter and collector
  • Enhancement mode type
  • High speed TF= 0.25μs (Typ.) (IC= 50A)
  • Low saturation voltage VCE (Sat)= 2.1V (Typ.) (IC= 50A)
 Model GT50J322
 Type N-Channel IGBT
 Origin JAPAN
 Collector-Emitter Voltage (VCES) 600V
 Gate-Emitter Voltage (VGES) ±20V
 Collector Current DC (Ic) 50A
 Emitter-Collector Forward Current DC (IF) 30A
 Collector Power Dissipation (Pc) 130W
 Junction Temperature (Tj) 150 (degree C)
 Storage Temperature Range -55~150 (degree C)
Country of Origin China

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