Description
TOSHIBA GT50J322 is a fourth-generation silicon N-Channel (Insulated Gate Bipolar Transistor) IGBT. IGBT can use in switching applications by operating the Gate. It is a Through-hole(THD) active component that consists of three terminals Gate, Collector, and Emitter. GT50J322 IGBT is often used in current resonance inverter switching applications.
Features
- FRD included between emitter and collector
- Enhancement mode type
- High speed TF= 0.25μs (Typ.) (IC= 50A)
- Low saturation voltage VCE (Sat)= 2.1V (Typ.) (IC= 50A)
Specifications
| Model | GT50J322 |
| Brand | TOSHIBA |
| Type | N-Channel IGBT |
| Origin | JAPAN |
| Collector-Emitter Voltage (VCES) | 600V |
| Gate-Emitter Voltage (VGES) | ±20V |
| Collector Current DC (Ic) | 50A |
| Emitter-Collector Forward Current DC (IF) | 30A |
| Collector Power Dissipation (Pc) | 130W |
| Junction Temperature (Tj) | 150 (degree C) |
| Storage Temperature Range | -55~150 (degree C) |
| Country of Origin | China |