Description
TOSHIBA K13A60D is a 600V Silicon N-Channel MOS Type. Until the voltage at the gate and terminal source exceed the minimal voltage cut in value, no current flows through the transistor. It is a through hole(THD) active component that consists of three terminals Gate, Drain, and Source. It is often used in switching regulator applications.
Features
- Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (Typ.)
- High forward transfer admittance: |YFs| = 6.5 S (typ.)
- Low leakage current: IDSS = 10 μA (VDS = 600 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA
Specifications
| Model | K13A60D |
| Brand | TOSHIBA |
| Transistor Polarity | N-Channel |
| Mounting Type | Through Hole |
| Drain-Source Voltage (VDSS) | 600V |
| Gate-Source Voltage (VGSS) |
±30V
|
| DC Drain-Current (ID) |
13A
|
| Pulse Drain-Current (IDP) |
52A
|
| Drain Power Dissipation (PD) |
50W
|
| Single Pulse Avalanche Energy (EAS) |
511mJ
|
| Avalanche current (IAR) |
13A
|
| Repetitive Avalanche Energy (EAR) |
5.0mJ
|
| Channel Temperature (Tch) |
150 °C
|
| Storage Temperature Range (TSTG) |
-55~150 °C
|
| Country of Origin | China |