TOSHIBA 2SK3878 900V 9A N-Channel Power MOSFET in TO-247 Package

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2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.


  • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
  • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
  • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
  • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Model 2SK3878
Drain Source Voltage  900V 
Drain Gate Voltage 900V
Gate Source Voltage ±30V
Drain Current 9A
Drain Power Dissipation 150W
Max. Channel Temperature 150°C
Package TO-247
Mounting Through Hole
Quantity 25
Country of Origin China

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