Description
The SKM75GB128 is a high-power insulated gate bipolar transistor (IGBT) module designed for use in various applications such as motor control, renewable energy systems, and power supplies. It features a high current rating, low saturation voltage, and robust construction for efficient and reliable performance in demanding environments.
Specifications:
- Maximum continuous collector current (IC): 75A
- Maximum collector-emitter voltage (VCE): 1200V
- Maximum power dissipation (Ptot): 330W
- Operating temperature range: -40°C to +150°C
- Gate-emitter voltage (VGES): ±20V
- Collector-emitter saturation voltage (VCEsat): Typically around 2.2V at 75A current