Description
The PM30RSF060 is a high-power IGBT (Insulated Gate Bipolar Transistor) module from Mitsubishi Electric. It features an original design for efficient power switching, combining low saturation voltage and high-speed switching. Ideal for industrial applications, it ensures reliable performance and high thermal efficiency, suitable for motor drives and inverters.
Specifications:
- Collector-Emitter Voltage (Vce): 600V
- Collector Current (Ic): 30A
- Power Dissipation (Ptot): 130W
- Gate-Emitter Voltage (Vge): ±20V
- Collector-Emitter Saturation Voltage (Vce(sat)): 2.5V (typical)
- Isolation Voltage: 2500V AC (for 1 minute)
- Operating Temperature Range: -20°C to +150°C
- Storage Temperature Range: -40°C to +150°C
- Package: High-power module package