Description
The PM30CSJ060 is a new Mitsubishi Insulated Gate Bipolar Transistor (IGBT) module. It features high efficiency, low power loss, and fast switching capabilities, making it suitable for a variety of industrial applications, including motor drives, inverters, and power supplies.
Specifications:
- Collector-Emitter Voltage (VCE): 600V
- Collector Current (IC): 30A
- Gate-Emitter Voltage (VGE): ±20V
- Collector Power Dissipation (Ptot): 100W
- Operating Junction Temperature Range (Tj): -40°C to 150°C
- Switching Frequency: Up to 20 kHz
- Package Type: Dual In-Line Package (DIP)
- Isolation Voltage: 2500V AC (1 minute)
- Mounting: Screw Mount
- Applications: Motor drives, power inverters, and general power switching.