Description
This Power MOSFET is the most recent improvement of STMicroelectronics' distinctive strip-based "single feature size" technique. The resultant transistor has outstanding manufacturing reproducibility because of its rugged avalanche features, extremely high packing density for low on-resistance, and minimally critical alignment stages.
Features
- Low Power Loss
- High-Efficiency
- High Current Capability
- Low Forward Voltage Drop
- Avalanche Rugged Technology
- High Surge Capability
- Guarding for Overvoltage Protection
- It has standard threshold features
- Its package is TO-220
Specifications
| Model | P80NF55-08 |
| Package | TO-220 |
| Type | Power MOSFET |
| Brand | ST micro electronics |
| Max Lead Temperature | 300 Degree Centigrade |
| Drain source breakdown voltage | 55V |
| Gate Threshold Voltage | 4V |
| Operating Temperature | 65 to 150° C |
| Country of Origin | China |