Description
The P30NF10 from STMicroelectronics is an N-Channel 100V, 35A Power MOSFET. The majority of electronic carriers that move in the channel are accountable for the flow of current by applying a signal to the gate that controls current conduction between source and drain. It is a through-hole active component with three terminals: Gate, Drain, and Source.
Features
- Exceptional dv/dt capability
- 100% avalanche tested
Specifications
| Model | P30NF10 |
| Brand | STMicroelectronics |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 35A |
| Drain-Source Resistance (Rds. on) | 0.045 ohms |
| Package | TO-220 |
| Packaging | Tube |
| Total Dissipation (25 degrees C) | 115W |
| Operating Junction and Storage temperature | -55~175 degree C |
| Country of Origin | China |