ONSEMI FAN7392 High-Current, High- & Low-Side, Gate-Drive IC

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The FAN7392 is a monolithic high− and low−side gate drive IC, that can drive high−speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross−conduction. ON Semiconductor’s high−voltage process and common−mode noise canceling techniques provide stable operation of the high−side driver under high dv/dt noise circumstances. An advanced level−shift circuit offers high−side gate driver operation up to VS = −9.8 V (typical) for VBS = 15 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage. The high−current and low−output voltage drop feature makes this device suitable for half− and full−bridge inverters, like switching−mode power supply and high−power DC−DC converter applications.

• Floating Channel for Bootstrap Operation to +600 V
• 3 A/3 A Sourcing/Sinking Current Driving Capability
• Common−Mode dv/dt Noise Canceling Circuit
• 3.3 V Logic Compatible
• Separate Logic Supply (VDD) Range from 3.3 V to 20 V
• Under−Voltage Lockout for VCC and VBS
• Cycle−by−Cycle Edge−Triggered Shutdown Logic
• Matched Propagation Delay for Both Channels
• Outputs In−phase with Input Signals
• Available in 14−DIP and 16−SOP (Wide) Packages
• This is a Pb−Free Device

• High−Speed Power MOSFET and IGBT Gate Driver
• Server Power Supply
• Uninterrupted Power Supply (UPS)
• Telecom System Power Supply
• Distributed Power Supply
• Motor Drive Inverter

Product Series FAN7392
Package DIP
High−Side Floating Supply Voltage -0.3V - 625V
Low−Side Supply Voltage -0.3V - 25V
Allowable Offset Voltage Slew Rate 50ns
Power Dissipation 1.6W
Thermal Resistance 75C/W
Maximum Junction Temperature +150C
Storage Temperature -55C - +150C
Quantity 50 
Country of Origin China

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