Description
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
Features
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
- High Input Impedance
- Fast Switching
- Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085)
- These Devices are Pb−Free and are RoHS Compliant
Applications
- Automotive Chargers, Converters, High Voltage Auxiliaries
- Inverters, PFC, UPS
Specifications
| Model | FGH40N60SFD |
| Brand | Onsemi/FSC |
| Collector to Emitter Voltage | 600V |
| Gate to Emitter Voltage | 20V |
| Transient Gate−to−Emitter Voltage | 30V |
| Collector Current | 40 C-80 C |
| Pulsed Collector Current | 120A |
| Operating Junction Temperature | -55°C - 150°C |
| Power Dissipation | 160W-290W |
| Package | TO-247 |
| Country of Origin | China |