ONSEMI 40N120 1200V 40A IGBT Power Transistor

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This Insulated Gate Bipolar Transistor (IGBT) has a sturdy and cost-effective Ultra Field Stop Trench construction. It provides excellent performance in demanding switching applications, with low on-state voltage and reduced switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A free-wheeling diode with a low forward voltage is also present. Fairchild's AND series of IGBTs uses NPT technology to produce reduced conduction and switching losses. The AND series provides a solution for induction heating (IH), motor control, general-purpose inverters, and uninterruptible power supplies (UPS)

  • High-speed switching
  • Low saturation voltage : VCE(sat)= 2.6 V @ IC= 40A
  • High input impedance
  • CO-PAK, IGBT with FRD : trr= 75ns (typ.)
  • Induction Heating, UPS, AC & DC motor controls and general
Model FGL40N120AND
Channel Type N Channel
Max. Collector-Emitter Voltage 1200V
Collector-Emitter Saturation Voltage 2.6V
Max. Gate-Emitter Voltage 25V
Max. Collector Current 64A
Max. Junction Temperature 150°C
Max Power Dissipation 500W
Rise Time 20ns
Package TO-264
Country of Origin China


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