ONSEMI 2N6027 Programmable Unijunction Transistor 40V 300mW (TO-92 Package)

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2N6027 Programmable Unijunction Transistor 40V 300mW is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. The application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO–92 plastic package for high–volume requirements, this package is readily adaptable for use in automatic insertion equipment.


  • Programmable- RBB, η, IV and IP
  • Low On-State Voltage -1.5 Volts Maximum @ IF = 50 mA
  • Low Gate to Anode Leakage Current -10 nA Maximum
  • High Peak Output Voltage -11 Volts Typical
  • Low Offset Voltage - 0.35 Volt Typical (RG = 10 k ohms)
Model 2N6027
Brand ON Semiconductor
Gate to Cathode Forward Voltage 40V
Gate to Cathode Reverse Voltage 5V
Gate to Anode Reverse Voltage 40V
Anode to Cathode Voltage 40V
Offset Voltage 1.6V
DC Anode Forward Current 150mA
DC Gate Current 50mA
Non-Repetitive Peak Forward Current 5A
Operating Temperature -50°~100°C
Power dissipation 300mW
Country of Origin China

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