Description
The 11N120 is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49303.
Features
- 43 A, 1200 V, TC = 25°C
- 1200 V Switching SOA Capability
- Typical Fall Time: 340 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Thermal Impedance SPICE Model
- This is Pb−Free Device
Specifications
| Model | 11N120BND |
| Brand | FSC/ONSEMI |
| Collector to Emitter Voltage | 1200V |
| Max. Collector Current |
43A |
| Max. Junction Temperature | 150°C |
| Package | TO-247 |
| Country of Origin | China |