Description
This NGTB40N65FL2WG IGBT Trench Field Stop 650 V 80 A 366 W Through Hole TO-247-3‚ Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Field Stop II Trench structure and delivers exceptional performance in demanding switching applications‚ with both low and high power consumption. on-state voltage and little switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A soft and quick copackaged free-wheeling diode with a low forward voltage is included in the device.
Features:
- Its soft fast reverse recovery diode
- Its maximum temperature 175 Degree Centigrade
- Its switching speed is High
| Specifications | |
|---|---|
| Part Number | NGTB40N65FL2WG |
| Operating Temperature Range | -55 to 175 |
| Mounting Style | Through Hole |
| Power Dissipation | 366W |
| Current | 80A |
| Voltage | 650V |
| Type | IGBT |
| Package | TO-247-3 |