MSF8N80 N-channel Enhanced-Mode MOSFET

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The MSF8N80 is an N-channel enhancement-mode MOSFET that provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The majority of electrons are found in the N-Channel, and their movement in the channel is responsible for the flow of current in the transistor. The ITO-220AB package is widely used in commercial and industrial applications. This latest technology was specifically designed to have low on-state resistance and high rugged avalanche characteristics. These devices are well suited for high-efficiency switch mode power supplies, active power factor correction, and half-bridge electronic lamp ballasts.


  • Adaptor
  • Switch mode power supply


  • RDS(on) @VGS=10V
  • Gate Charge (Typical 39nC)
  • Improved dv/dt capability, High Ruggedness
  • 100% Avalanche Tested
  • Maximum Junction Temperature Range (150 degrees C)
  • RoHS Compliant Package


 Model MSF8N80
 Brand Bruckewell
 Polarity Type N-Channel
 Drain-Source Voltage (VDSS) 800V
 Gate-Source Voltage (VGS) ±30V
 Continuous Drain-Current (ID) 8A
 Pulsed Drain-Current (IDM) 32A
 Single Pulsed Avalanche Energy (EAS) 850mJ
 Repetitive Avalanche Energy (EAR) 17.8mJ
 Mounting Type Through Hole
 Package ITO220-AB
Country of Origin China

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