Description
K75T60 is an IGBT fast recovery Anti-parallel diode, a switching device mainly used in switching applications. Its recovery time is too fast. Just because of the fast recovery, the switching speed is too fast. It's a lead-free device, as the IGBT is mainly used in switching applications like SMPS, UPS, Snubber, welder and other general switching applications.
Features:
- Maximum Junction Temperature 175 °C
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Short circuit withstand time – 5us
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Positive temperature coefficient in VCE(sat)
- very tight parameter distribution
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high ruggedness, temperature-stable behaviour
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very high switching speed
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Low EMI
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Very soft, fast recovery
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anti-parallel Em Con HE diode
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(Qualified according to JEDEC1)for target applications
Specifications:
| Part Number | K75T60 |
| Type | IGBT |
| Mounting Style | Through Hole |
| Short Circuit withstand Time | 5uS |
| Junction Temperature | 175 Degree Centigrade |
| Package | TO-247 |
| Brand | Infineon |
| Power | 428W |
| Current | 255A |
| Country of Origin | China |