Description
The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications.
Features:
- Fast recovery diode
- High power density
- Easy to mount for Printed Circuit Boards
- Fast Intrinsic Diode
Applications:
- Switched-mode and resonant-mode power supplies
- DC-DC Converters
- Laser Drivers
- AC and DC motor controls
- Robotics and servo controls
Specification
| Model | IXFH20N100 |
| Brand | IXYS |
| Drain-Source Voltage (VDS) | 1000V |
| Gate-Source Voltage (VGS) | ±30V |
| Drain Power Dissipation | 660W |
| Operating Temperature | -55°C~150°C |
| Package | TO-247 |
| Quantity | 100 |
| Country of Origin | China |