IXXH30N60B3D1 600V IGBT Transistors

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Description

IXXH30N60B3D1 is a 600V IGBT Transistor in the TO-247AD-3 package. It is Extreme Light Punch Through IGBT for 5-30 kHz Switching. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubbers' hard-switching applications.

 Datasheet

Features

  • Optimized for 5-30kHz Switching

  • Square RBSOA

  • Anti-Parallel Ultra Fast Diode

  • Avalanche Capability

  • Short Circuit Capability

  • International Standard Package

Advantages

  • High Power Density

  • 175°C Rated

  • Extremely Rugged

  • Low Gate Drive Requirement

Applications

  • Power Inverters, UPS

  • Motor Drives

  • SMPS

  • PFC Circuits

  • Battery Chargers

  • Welding Machines

Specification
Model IXXH30N60B3D1 
Brand IXYS
Type IGBT Transistors
Package/Case TO-247AD-3
Collector-Emitter Voltage |VCEO| 600V
Collector-Emitter Saturation Voltage 1.66V
Mounting Type
Through Hole
Current - Collector (Ic) (Max) 60A
No. of Pin
03
Power Dissipation
270W
Country of Origin China

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