Description
The IXFN48N50 is a high-performance IGBT (Insulated Gate Bipolar Transistor) diode designed for power electronics applications. With a voltage rating of 500V and a current rating of 48A, it offers efficient switching capabilities. This diode is commonly used in inverters, motor drives, and other high-power electronic systems requiring reliable and robust performance.
Specifications:
- Voltage Rating: 500V
- Current Rating: 48A
- Package Type: TO-247
- Maximum Operating Temperature: 150°C
- High-speed switching capability
- Low saturation voltage
- Suitable for high-power applications such as inverters and motor drives