Description
The IXFN44N80 is a high-performance IGBT (Insulated Gate Bipolar Transistor) diode designed for power electronics applications. It features a voltage rating of 800V, a current rating of 44A, and low on-state voltage drop for efficient power conversion. With its robust design and high reliability, it's suitable for various industrial and automotive applications.
Specifications:
- Voltage Rating: 800V
- Current Rating: 44A
- Low On-State Voltage Drop
- High Performance for Power Electronics Applications
- Robust Design and High Reliability
- Suitable for Industrial and Automotive Applications