IXYS IXFH20N100 1000V 20A N-Channel MOSFET TO-247 Package

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The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications.


  • Fast recovery diode
  • High power density
  • Easy to mount for Printed Circuit Boards
  • Fast Intrinsic Diode


  • Switched-mode and resonant-mode power supplies
  • DC-DC Converters
  • Laser Drivers
  • AC and DC motor controls
  • Robotics and servo controls
 Model  IXFH20N100
Brand  IXYS
Drain-Source Voltage (VDS) 1000V
Gate-Source Voltage (VGS) ±30V
Drain Power Dissipation 660W
Operating Temperature -55°C~150°C
Package TO-247
Country of Origin China

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