IRFZ34N Power MOSFET International Rectifier

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IRFZ34N  International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. Ultra Low On-Resistance, Dynamic dv/dT Rating, 175°C Operating Temperature, Fast Switching, and Ease of Paralleling are all characteristics of advanced process technology.


  • Its fully avalanche rated

  • It has designed by advanced process technology

  • Its dv/dT rating

  • Its operating temperature is 175 degree centigrade

  • Its power dissipation is 56W
Model IRFZ34N  
Type Power MOSFET
Package TO-220AB
Brand International rectifier
Pulse drain current  100A
Avalanche current 16A
Soldering temperature 300°C
Operating and Storage Temperature Range -55°C TO 175°C
Country of Origin China

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