IRFZ34N International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.
Ultra Low On-Resistance, Dynamic dv/dT Rating, 175°C Operating Temperature, Fast Switching, and Ease of Paralleling are all characteristics of advanced process technology.
Its fully avalanche rated
It has designed by advanced process technology
Its dv/dT rating
Its operating temperature is 175 degree centigrade
- Its power dissipation is 56W
|Pulse drain current||100A|
|Operating and Storage Temperature Range||-55°C TO 175°C|