Description
The IR MOSFET family of Power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including battery-powered devices, DC motors, inverters, SMPS, lighting, load switches, and illumination. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. For commercial and industrial applications where TO-220 devices cannot be used due to greater power levels, the TO-247 package is suggested. Because of its isolated mounting hole, the TO-247 is similar to the older TO-218 package but is better.
Features
- Planar cell structure for wide SOA (SAFE OPERATING AREA)
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High current rating
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
Specification
| Model | IRFP3710 |
| Type | Power MOSFET |
| Continuous Drain Current, VGS @ 10V | 57 A |
| Power Dissipation @ 25°C | 200 W |
| Avalanche Current | 28 A |
| Gate-to-Source Voltage (VGS) | ± 20 V (max) |
| Storage Temperature Range | -55°C to + 175°C |
| Mounting type | TO247 |
| Country of Origin | China |