IRFP264 TO247 N-Channel Power MOSFET

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IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W.  The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.


  • Advanced Process Technology
  • Ultra-Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Lead-Free, RoHS Compliant
Part Number IRFP264
Polarity N-Channel
Drain Source Breakdown Voltage 250 V
Continuous Drain Current 38 A
Drain Source Resistance 0.075 ohms
Gate Source Voltage 20 V
Power Dissipation (Pd) 280 W
Package TO-247 AC
Operating Temperature Range -55 °C - 150 °C
Country of Origin China

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