IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
The additional features of this design are:
A 175°C junction operating temperature
Fast switching speed
Improved repetitive avalanche rating.
An extremely efficient and reliable device for use in automotive applications.
- Advanced Process Technology
- Ultra-Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Lead-Free, RoHS Compliant
|Drain Source Breakdown Voltage||250 V|
|Continuous Drain Current||38 A|
|Drain Source Resistance||0.075 ohms|
|Gate Source Voltage||20 V|
|Power Dissipation (Pd)||280 W|
|Operating Temperature Range||-55 °C - 150 °C|