Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing techniques to produce extraordinarily low on-resistance per silicon area. This feature gives the designer an exceptionally efficient and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. For commercial and industrial applications, where greater power levels limit the usage of TO-220 devices, the TO-247 package is preferable. Because of its isolated mounting hole, the TO-247 is similar to the older TO-218 package but is superior.
Features
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Its used in switching operation
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Its maximum operating temperature 175 degree centigrade
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Low leakage current
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It has the capability to improved dv/dT
- 100% avalanche energy rated
Specification
| Model | IRFP250N |
| Type | MOSFET |
| Package | TO-220-FL |
| VDSS | 200V |
| Drain current | 30A |
| Pulse drain current | 120A |
| Total power dissipation | 214W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |