Description
IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition to the quick switching speed and rugged design that IR MOSFETTM devices are renowned for.
Features:
- Advanced Process Technology
- Dynamic dv/DT Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
Specifications:
| Model | IRFP250M |
| Type | MOSFET |
| Package | TO-247AD |
| Pin | 3 |
| Continuous Drain Current | 30A |
| Maximum Power Dissipation | 214W |
| Avalanche Current | 30A |
| Repetitive Avalanche Energy | 21mJ |
| Soldering Temperature, for 10 seconds | 300Degree Centigrade |
| Country of Origin | China |