Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Full eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. This is mounted to a heatsink using a single clip or by a single screw fixing.
Features
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It has isolated package
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Avalanche energy rated
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High voltage isolation 2.5KVRMS
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Sink to lead creepage distance 4.8mm
- It has small size
Specification
| Model | IRFIZ24N |
| Type | Power MOSFET |
| Package | TO-220Fullpak |
| Peak diode recovery | 5V/ns |
| Avalanche current | 10A |
| Pulse drain current | 68A |
| Total power dissipation | 29W |
| Operating and Storage Temperature Range | -55°C TO 175°C |
| Country of Origin | China |