IRFB38N20 200V 43A N-Channel Power MOSFET Transistor

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Description

An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current applications. Higher switching frequencies will allow you to design supplies with considerably wider control-loop bandwidth which can be provided by IRFB38N20, which is typically between a fifth and a tenth of the switching frequency. This is important because the wider the loop bandwidth, the fewer output filter capacitors are needed, leading to a cheaper design and smaller pc-board footprints. IRFB38N20 is an N-Channel Power MOSFET Transistor used in high-frequency DC-DC converters. 


Features
  •  Low Gate-to-Drain Charge to Reduce Switching Losses
  •  Fully Characterized Capacitance Including Effective Coss to Simplify Design
  •  Fully Characterized Avalanche Voltage and Current
Specification

Model

IRFB38N20

Brand

IR

Transistor Polarity

 N-Channel

Vds - Drain-Source Breakdown Voltage

200 V

Id - Continuous Drain Current

43 A

Rds On - Drain-Source Resistance

54 mOhms

Vgs - Gate-Source Voltage

-30 V -  + 30 V

Vgs th - Gate-Source Threshold Voltage

3 V -  5 V

Operating Voltage

-55°C - 175°C

Package

TO-220

Country of Origin China

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