Description
An N-Channel MOSFET creates a current channel by using electrons. Electrons can move fast and readily via the current when the MOSFET is active and switched on. Because of the unique features of N-Channel MOSFETs, carrier mobility is approximately 2 to 3 times that of a P-channel for the same RDS(on) value, hence the P-Channel chip must be 2 to 3 times the size of the N-Channel. As a result, adopting MOSFET transistor N-Channels for high current applications is frequently the favored option.
Features
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead-Free
- Halogen-Free
Applications
- High-Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High-Speed Power Switching
- Hard Switched and High-Frequency Circuits
Specifications
| Model | IRFB3607 |
| Transistor Type | MOSFET |
| Channel Type | N-Channel |
| Max. Power Dissipation (Pd) | 140W |
| Max. Drain Source Voltage (Vds) | 75V |
| Max. Gate Source Voltage (Vgs) | 20V |
| Max. Drain Current (Id) | 80A |
| Total Gate Charge (Qg) | 56nC |
| Country of Origin | China |