IRFB20N50K 500V, 20A N channel Power MOSFET

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IRFB20N50K is an N channel enhancement Power MOSFET with a low gate charge . And this MOSFET has improved gate, avalanche and dynamic ruggedness. It has fully characterized capacitance and avalanche voltage and current with low Rds(on) and simple drive requirements.  The comprehensive portfolio addresses a broad range of applications including switch mode power supply, uninterruptible power supply, and high-speed power switching. 


  •  Low gate charge Qg results in simple drive requirement 
  •  Improved gate, avalanche, and dynamic dV/dt ruggedness 
  •  Fully characterized capacitance and avalanche voltage and current 
  •  Low RDS(on)
Model IRFB20N50K
Type of Transistor MOSFET
Type of Control Channel N -Channel
Maximum Power Dissipation (Pd) 280 W at 25°C
Maximum Drain-Source Voltage |Vds| 500 V
Drain Current 20A
Maximum Gate-Source Voltage |Vgs| 30 V
Total Gate Charge (Qg 110 nC
Maximum Drain-Source On-State Resistance (Rds) 0.21 Ohm
Packaging type T0220
Country of Origin China

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