Description
IRF640 is a type of power MOSFET. It's also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device. It's used to switch the power that's why it's known as the power-switching MOSFET. Its drain-source voltage is 200V. And its drain current is 18A.
Features
- Low Power Loss
- High-Efficiency
- High Current Capability
- Low Forward Voltage Drop
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
-
Lower Leakage Current: 10A (Max.) @ VDS= 200V
- High Surge Capability
- Guarding for Overvoltage Protection
Specifications
| Model | IRF640 |
| Package | TO-220 |
| Voltage | 200V |
| Drain Current | 18A |
| Max Lead Temperature | 300 Degree Centigrade |
| Non-Repetitive Peak Current | 150A |
| Peak Diode Recovery (dv/dt) | 5.0 V/us |
| Operating Temperature | 65 to 150° C |
| Country of Origin | China |