Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with a highly efficient and reliable device for use in various applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features
- Advanced Process Technology
- Ultra-Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Specifications
| Model | IRF3205 |
| Brand | International Rectifier |
| Type of Transistor | MOSFET |
| Type of Control Channel |
N -Channel Maximum
|
| No. of Pins | 3 |
| Maximum Power Dissipation (Pd) |
150 W
|
| Maximum Drain-Source Voltage |Vds| | 55 V |
| Maximum Gate-Source Voltage |Vgs| | 10V |
| Country of Origin | China |