Infineon IRFB7545 N-Channel MOSFET

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The IRFB7545PBF is an N-channel HEXFET Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It is appropriate for battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and so on.


  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • Lead-free, RoHS compliant 


  • Brushed motor drive applications
  • BLDC motor drive applications
  • Battery-powered circuits
  • Half-bridge and full-bridge topologies
  • Synchronous rectifier applications
  • Resonant mode power supplies
  • OR-ing and redundant power switches
  • DC/DC and AC/DC converters
  • DC/AC inverters 
Model IRFB7545
Brand Infineon
Transistor Type MOSFET
Type of Control Channel N-Type
Max. Drain-Source Voltage 60V
Max. Gate-Source Voltage 20V
Max. Gate-Threshold Voltage 3.7V
Max. Drain Current 95A
Drain-Source Capacitance 370pF
Max. Operating Junction Temperature 175°C
Rise Time 72ns
Max. Drain-Source On-state Resistance 0.0059 ohm
Max. Power Dissipation 125W
Package TO-220
Mounting Through Hole
Country of Origin China


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