Infineon IRFB4110 N-Channel MOSFET

Sold By: Sanpra EnterprisesSKU: SN29

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Description

The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Features

  • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness 
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability 
  • Lead Free 
  • RoHS Compliant, Halogen-Free

Applications

  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
Specifications
Model IRFB4110
Brand Infineon
Transistor Type MOSFET
Type of Control Channel N-Type
Max. Drain-Source Voltage 100V
Max. Gate-Source Voltage 20V
 Continuous Drain Current, VGS @ 10V 130-180A
No. of Pins 3 pins
Pulsed Drain Current 670A
Max. Operating Junction Temperature 175°C
Rise Time 67ns
Peak Diode Recovery 5.3V
Max. Power Dissipation 370W
Package TO-220
Mounting Through Hole

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