Description
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Features
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead Free
- RoHS Compliant, Halogen-Free
Applications
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Specifications
| Model | IRFB4110 |
| Brand | Infineon |
| Transistor Type | MOSFET |
| Type of Control Channel | N-Type |
| Max. Drain-Source Voltage | 100V |
| Max. Gate-Source Voltage | 20V |
| Continuous Drain Current, VGS @ 10V | 130-180A |
| No. of Pins | 3 pins |
| Pulsed Drain Current | 670A |
| Max. Operating Junction Temperature | 175°C |
| Rise Time | 67ns |
| Peak Diode Recovery | 5.3V |
| Max. Power Dissipation | 370W |
| Package | TO-220 |
| Mounting | Through Hole |
| Country of Origin | China |