Infineon IRF840 N-Channel Power MOSFET 8A 500V

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Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50 W, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.


  •  Dynamic dV/dt rating
  •  Repetitive avalanche rated
  •  Fast switching
  •  Ease of paralleling
  •  Simple drive requirements
Model IRF840
Transistor Polarity N-Channel
Drain-Source Voltage (Vds) 500V
Continuous Drain Current(Id) 5.1-8A
Drain Source Resistance (Rds on) 0.85 ohms
Gate Source Voltage (Vgs) 10V
Power Dissipation 50W
Package Type TO-220
Country of Origin China

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