Description
IDT06S60C is a 2nd generation SiC (silicon carbide) Schottky diode. It's a low power, low capacitance, high current density diode with a high switching rate making it a suitable fit for a vast range of applications. Due to its small depletion area, even low voltage is sufficient to generate a big current. IDT06S60C is specifically designed for fast switching applications such as motor drives and CCM PFC. It boasts high surge current capabilities while temperature variation has little to no effect on IDT06S60C switching behavior, hence making it the best fit for projects working in high/low temperatures. The diode is Pb-free and RoHS compliant hence safe for you as well as the environment. Break down voltage tested at 5 mA.
Features:
- Revolutionary semiconductor material - Silicon Carbide
- Switching behavior benchmark
- No reverse recovery/ No forward recovery
- High surge current capability
- RoHS compliant
Specifications:
| Manufacturer | Infineon |
| RoHS | Certified |
| Forward Current | 6 A |
| Repetitive Reverse Voltage | 600 V |
| Forward Voltage | 1.7 V |
| Forward Surge Current | 49 A |
| Reverse Current | 80 uA |
| Min/Max Operating Temperature |
-55°C to 175° C |
| Type | Schottky Diode |
| Package | TO220 |
| Quantity | 100 |
| Country of Origin | China |