Description
The IDT06S60 is a SiC (silicon carbide) Schottky diode of the second generation. It is a low power, low capacitance, high current density diode with a fast switching rate that is suitable for a wide range of applications. Because of its small depletion area, even a low voltage can generate a large current. The IDT06S60 is designed specifically for fast switching applications such as motor drives and CCM PFC. It has high surge current capabilities, and temperature variation has little to no effect on IDT06S60 switching behavior, making it ideal for high/low-temperature projects. The diode is Pb-free and RoHS compliant, making it safe for both you and the environment. Breakdown voltage was measured at 5 mA.
Features
- Revolutionary semiconductor material - Silicon Carbide
- Switching behavior benchmark
- No reverse recovery/ No forward recovery
- No temperature influences the switching behaviour
- High surge current capability
- Pb-free lead plating; RoHS compliant
Specifications
| Manufacturer | Infineon |
| RoHS | Certified |
| Forward Current | 6A |
| Repetitive Reverse Voltage | 600 V |
| Forward Voltage | 1.7 V |
| Forward Surge Current | 49 A |
| Reverse Current | 80 uA |
| Switching time | <10 ns |
| Package | TO220 |
| Country of Origin | China |