Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 Package

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Sold By: HatchnHackSKU: E08-05

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These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics.


  • New revolutionary high voltage technology
  • Ultra-low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra-low effective capacitances
  • Improved transconductance


  • Industrial application with high DC bulk voltage
  • Switching Application 

 Model 17N80C3
Channel Type N-Channel
Max. Drain-Source Voltage 800V
Max. Gate-Source Voltage 20V
Max. Gate-Threshold Voltage 3.9V
Max. Drain Current 17A
Max. Power Dissipation 227W
Total Gate Charge 88nC
Rise Time 15ns
Max. Drain-Source on-state Resistance 0.29 ohm
Package TO-247
Country of Origin China

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