Description
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics.
Features
- New revolutionary high voltage technology
- Ultra-low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra-low effective capacitances
- Improved transconductance
Applications
- Industrial application with high DC bulk voltage
- Switching Application
Specifications
| Model | 17N80C3 |
| Channel Type | N-Channel |
| Max. Drain-Source Voltage | 800V |
| Max. Gate-Source Voltage | 20V |
| Max. Gate-Threshold Voltage | 3.9V |
| Max. Drain Current | 17A |
| Max. Power Dissipation | 227W |
| Total Gate Charge | 88nC |
| Rise Time | 15ns |
| Max. Drain-Source on-state Resistance | 0.29 ohm |
| Package | TO-247 |
| Country of Origin | China |