Infineon 17N80C3 800V 17A N Channel MOSFET TO-220 Package

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These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.


  • New revolutionary high voltage technology
  • Worldwide best RDS(on) in TO-220
  • Ultra-low gate charge• Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra-low effective capacitances
  • Improved transconductance


 Model SPA17N80C3
Channel Type N-Channel
Max. Drain-Source Voltage 800V
Max. Gate-Source Voltage 20V
Mx. Gate-Threshold Voltage 3.9V
Max. Drain Current 17A
Max. Junction Temperature 150°C
Max. Power Dissipation 42W
Total Gate Charge 91nC
Rise Time 15ns
Drain Source Capacitance 1250pF
Max. Drain-Source on-state Resistance 0.29 ohm
Package TO-220
Country of Origin China

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