Description
The G60N100B2TD is a 1000V NPT IGBT that provides improved conduction and switching performance‚ great avalanche toughness‚ and simple parallel operation. This device provides the best performance for demanding switching applications like as UPS and welders.
Features:
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It has High-Speed Switching
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Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
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It has High Input Impedance
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Its Built-in Fast Recovery Diode
| Specifications | |
|---|---|
| Part Number | G60N100BNTD |
| Mounting Style | Through Hole |
| Power Dissipation | 180W |
| Current | 60A |
| Voltage | 1000V |