Description
G4PF50WD is an IGBT Ultrafast recovery diode mainly used in fast switching applications, and It's an electronic switch where we do not need manual movement for switching. Its recovery time is too fast this features make it used as a switching element. its operating voltage is 2.25V. And a collector current is 28A.
Features
- Low Power Loss
- High-Efficiency
- High Current Capability
- Low Forward Voltage Drop
- Avalanche Rugged Technology
-
GBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- High Surge Capability
- Low IGBT conduction loss
- Guarding for Overvoltage Protection
Specifications
| Model | G4PF50WD |
| Package | TO-247AC |
| Type | IGBT MOSFET |
| Collector Current | 28A |
| Max Lead Temperature | 300 Degree Centigrade |
| Max Power Dissipation | 200W |
| Gate to emitter voltage | 20V |
| Operating Temperature | 55 to 150° C |
| Country of Origin | China |