Description
G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and minimal minority-carrier recombination that makes it an excellent option for resonant mode switching as well (up to >300 K Hz)
Features
- Designed expressly for switch-mode power supply and PPF (power factor correction) applications
- Industry-benchmark switching losses improve the efficiency of all power supply topologies
- 50% reduction of the Eoff parameter
- Low IGBT conduction losses
- Latest generation IGBT design and construction offer tighter parameters distribution, exceptional reliability
- Lead-free
Specifications
| Model | IRG4PC50W |
| Brand | International Rectifier |
| Transistor Type | N-Channel IGBT |
| Collector to Emitter Breakdown (VCES) | 600V |
| Continuous Collector Current (IC) | 55A |
| Pulsed Collector Current (ICM) | 220A |
| Power @max | 200W |
| Mounting Type | Through Hole |
| Operating Temperature | -55~150 degree C |
| Package | TO-247AC |
| Country of Origin | China |