G4PC50W, 600V 55A N-Channel IGBT

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G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and minimal minority-carrier recombination that makes it an excellent option for resonant mode switching as well (up to >300 K Hz)



  • Designed expressly for switch-mode power supply and PPF (power factor correction) applications
  • Industry-benchmark switching losses improve the efficiency of all power supply topologies
  • 50% reduction of the Eoff parameter
  • Low IGBT conduction losses
  • Latest generation IGBT design and construction offer tighter parameters distribution, exceptional reliability
  • Lead-free
Model IRG4PC50W 
Brand International Rectifier
Transistor Type N-Channel IGBT
Collector to Emitter Breakdown (VCES) 600V
Continuous Collector Current (IC) 55A
Pulsed Collector Current (ICM) 220A
Power @max 200W
Mounting Type Through Hole
Operating Temperature -55~150 degree C
Package  TO-247AC
Country of Origin China

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